2SD2702TL Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 85mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 25mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.As you can see, the part has a transition frequency of 400MHz.An input voltage of 12V volts is the breakdown voltage.A maximum collector current of 1.5A volts is possible.
2SD2702TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 85mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SD2702TL Applications
There are a lot of ROHM Semiconductor 2SD2702TL applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
