2SB1204T-TL-E Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -550mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of -6V can achieve high levels of efficiency.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

2SB1204T-TL-E Features

the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -550mV
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at -6V

2SB1204T-TL-E Applications

There are a lot of ON Semiconductor 2SB1204T-TL-E applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter