ZXTP5401ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP5401ZTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP5401
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.2W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
150V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
150V
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
5V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.160800
$0.1608
10
$0.151698
$1.51698
100
$0.143111
$14.3111
500
$0.135011
$67.5055
1000
$0.127369
$127.369
ZXTP5401ZTA Product Details
ZXTP5401ZTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.The part has a transition frequency of 100MHz.A breakdown input voltage of 150V volts can be used.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
ZXTP5401ZTA Features
the DC current gain for this device is 60 @ 10mA 5V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at 5V a transition frequency of 100MHz
ZXTP5401ZTA Applications
There are a lot of Diodes Incorporated ZXTP5401ZTA applications of single BJT transistors.