FZT493TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT493TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2000
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
100V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
FZT493
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 250mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
1A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.419880
$0.41988
10
$0.396113
$3.96113
100
$0.373692
$37.3692
500
$0.352539
$176.2695
1000
$0.332584
$332.584
FZT493TA Product Details
FZT493TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 250mA 10V DC current gain.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of 1A is necessary for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.A transition frequency of 150MHz is present in the part.Single BJT transistor can be broken down at a voltage of 100V volts.A maximum collector current of 1A volts can be achieved.
FZT493TA Features
the DC current gain for this device is 100 @ 250mA 10V a collector emitter saturation voltage of 600mV the vce saturation(Max) is 600mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 150MHz
FZT493TA Applications
There are a lot of Diodes Incorporated FZT493TA applications of single BJT transistors.