FZT591TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Continuous collector voltages should be kept at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 150MHz.An input voltage of 60V volts is the breakdown voltage.Collector current can be as low as 1A volts at its maximum.
FZT591TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -7V
the current rating of this device is -1A
a transition frequency of 150MHz
FZT591TA Applications
There are a lot of Diodes Incorporated FZT591TA applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
