FZT651TC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT651TC Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
175MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT651
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
175MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
175MHz
Collector Emitter Saturation Voltage
430mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
3A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.130338
$0.130338
10
$0.122960
$1.2296
100
$0.116000
$11.6
500
$0.109434
$54.717
1000
$0.103240
$103.24
FZT651TC Product Details
FZT651TC Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.A collector emitter saturation voltage of 430mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 300mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).175MHz is present in the transition frequency.A maximum collector current of 3A volts can be achieved.
FZT651TC Features
the DC current gain for this device is 100 @ 500mA 2V a collector emitter saturation voltage of 430mV the vce saturation(Max) is 600mV @ 300mA, 3A the emitter base voltage is kept at 5V the current rating of this device is 3A a transition frequency of 175MHz
FZT651TC Applications
There are a lot of Diodes Incorporated FZT651TC applications of single BJT transistors.