SMBT3904E6327HTSA1 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 6V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (200mA).Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.A breakdown input voltage of 40V volts can be used.The maximum collector current is 200mA volts.

SMBT3904E6327HTSA1 Features

the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz

SMBT3904E6327HTSA1 Applications

There are a lot of Infineon Technologies SMBT3904E6327HTSA1 applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver