2SA1507S Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 5V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at -6V, an efficient operation can be achieved.As a result, the part has a transition frequency of 120MHz.Single BJT transistor can be broken down at a voltage of 160V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

2SA1507S Features

the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz

2SA1507S Applications

There are a lot of ON Semiconductor 2SA1507S applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver