BC850CE6359HTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC850CE6359HTMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
330mW
Power - Max
330mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.02000
$0.02
500
$0.0198
$9.9
1000
$0.0196
$19.6
1500
$0.0194
$29.1
2000
$0.0192
$38.4
2500
$0.019
$47.5
BC850CE6359HTMA1 Product Details
BC850CE6359HTMA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Supplier package SOT-23-3 contains the product.The device has a 45V maximal voltage - Collector Emitter Breakdown.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC850CE6359HTMA1 Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA the supplier device package of SOT-23-3
BC850CE6359HTMA1 Applications
There are a lot of Infineon Technologies BC850CE6359HTMA1 applications of single BJT transistors.