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FZT717TA

FZT717TA

FZT717TA

Diodes Incorporated

FZT717TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT717TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -12V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3A
Frequency 110MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT717
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 320mV @ 50mA, 3A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage -320mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 12V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -3A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.342600 $0.3426
10 $0.323208 $3.23208
100 $0.304913 $30.4913
500 $0.287654 $143.827
1000 $0.271371 $271.371
FZT717TA Product Details

FZT717TA Overview


In this device, the DC current gain is 300 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -320mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 320mV @ 50mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.In the part, the transition frequency is 110MHz.This device can take an input voltage of 12V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

FZT717TA Features


the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -320mV
the vce saturation(Max) is 320mV @ 50mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 110MHz

FZT717TA Applications


There are a lot of Diodes Incorporated FZT717TA applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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