2STR1215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 850mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 850mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A transition frequency of 100MHz is present in the part.A breakdown input voltage of 15V volts can be used.Maximum collector currents can be below 1.5A volts.
2STR1215 Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 850mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2STR1215 Applications
There are a lot of STMicroelectronics 2STR1215 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
