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2STR1215

  • 2STR1215
  • 2STR1215

2STR1215

2STR1215

STMicroelectronics

2STR1215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

2STR1215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number 2STR
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 850mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 15V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 850mV
Max Breakdown Voltage 15V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 5V
Height 950μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.11024 $0.33072
6,000 $0.10468 $0.62808
15,000 $0.09633 $1.44495
30,000 $0.09076 $2.7228
75,000 $0.08427 $6.32025
2STR1215 Product Details

2STR1215 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 850mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 850mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A transition frequency of 100MHz is present in the part.A breakdown input voltage of 15V volts can be used.Maximum collector currents can be below 1.5A volts.

2STR1215 Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 850mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

2STR1215 Applications


There are a lot of STMicroelectronics 2STR1215 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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