JANTXV2N3057A Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 500mA 10V.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

JANTXV2N3057A Features

the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V

JANTXV2N3057A Applications

There are a lot of Microsemi Corporation JANTXV2N3057A applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter