BC857AMB,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC857AMB,315 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Max Power Dissipation
250mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC857
Pin Count
3
Power - Max
250mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
45V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.143551
$0.143551
10
$0.135426
$1.35426
100
$0.127760
$12.776
500
$0.120528
$60.264
1000
$0.113706
$113.706
BC857AMB,315 Product Details
BC857AMB,315 Overview
In this device, the DC current gain is 125 @ 2mA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 500μA, 10mA.Emitter base voltages of 5V can achieve high levels of efficiency.The maximum collector current is 100mA volts.
BC857AMB,315 Features
the DC current gain for this device is 125 @ 2mA 5V the vce saturation(Max) is 300mV @ 500μA, 10mA the emitter base voltage is kept at 5V
BC857AMB,315 Applications
There are a lot of Nexperia USA Inc. BC857AMB,315 applications of single BJT transistors.