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FZT751QTA

FZT751QTA

FZT751QTA

Diodes Incorporated

FZT751QTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT751QTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 40
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 3W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 140MHz
Max Breakdown Voltage 60V
Frequency - Transition 140MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.47073 $0.47073
2,000 $0.44289 $0.88578
5,000 $0.42432 $2.1216
FZT751QTA Product Details

FZT751QTA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).140MHz is present in the transition frequency.The breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 3A volts.

FZT751QTA Features


the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 600mV @ 300mA, 3A
a transition frequency of 140MHz

FZT751QTA Applications


There are a lot of Diodes Incorporated FZT751QTA applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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