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BST51,115

  • BST51,115
  • BST51,115

BST51,115

BST51,115

Nexperia USA Inc.

BST51,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BST51,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BST51
Pin Count 3
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection COLLECTOR
Power - Max 1.3W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.3V @ 500μA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Transition Frequency 200MHz
Frequency - Transition 200MHz
VCEsat-Max 1.3 V
Turn Off Time-Max (toff) 1500ns
Turn On Time-Max (ton) 400ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.474468 $0.474468
10 $0.447612 $4.47612
100 $0.422275 $42.2275
500 $0.398373 $199.1865
1000 $0.375823 $375.823
BST51,115 Product Details

BST51,115 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 500mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.3V @ 500μA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.The device exhibits a collector-emitter breakdown at 60V.

BST51,115 Features


the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
a transition frequency of 200MHz

BST51,115 Applications


There are a lot of Nexperia USA Inc. BST51,115 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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