MMBT3904-HF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available on our website
SOT-23
MMBT3904-HF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Other Transistors
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Element Configuration
Single
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
200mA
Turn Off Time-Max (toff)
250ns
Turn On Time-Max (ton)
70ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.248271
$0.248271
10
$0.234218
$2.34218
100
$0.220960
$22.096
500
$0.208453
$104.2265
1000
$0.196654
$196.654
MMBT3904-HF Product Details
MMBT3904-HF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 200mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.The part has a transition frequency of 300MHz.Input voltage breakdown is available at 40V volts.When collector current reaches its maximum, it can reach 200mA volts.
MMBT3904-HF Features
the DC current gain for this device is 100 @ 10mA 1V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 300mV @ 5mA, 50mA the emitter base voltage is kept at 6V a transition frequency of 300MHz
MMBT3904-HF Applications
There are a lot of Comchip Technology MMBT3904-HF applications of single BJT transistors.