MMBT3904-HF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 200mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.The part has a transition frequency of 300MHz.Input voltage breakdown is available at 40V volts.When collector current reaches its maximum, it can reach 200mA volts.
MMBT3904-HF Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904-HF Applications
There are a lot of Comchip Technology MMBT3904-HF applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
