DSS4240T-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 1A 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 320mV @ 200mA, 2A.An emitter's base voltage can be kept at 5V to gain high efficiency.As you can see, the part has a transition frequency of 100MHz.An input voltage of 40V volts is the breakdown voltage.The maximum collector current is 2A volts.
DSS4240T-7 Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
DSS4240T-7 Applications
There are a lot of Diodes Incorporated DSS4240T-7 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
