FZT751TC Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of -450mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages of -3A should be maintained to achieve high efficiency.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.Parts of this part have transition frequencies of 140MHz.A maximum collector current of 3A volts is possible.
FZT751TC Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -450mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 140MHz
FZT751TC Applications
There are a lot of Diodes Incorporated FZT751TC applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
