BCX52E6327HTSA1 Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.As you can see, the part has a transition frequency of 125MHz.The device exhibits a collector-emitter breakdown at 60V.
BCX52E6327HTSA1 Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 125MHz
BCX52E6327HTSA1 Applications
There are a lot of Infineon Technologies BCX52E6327HTSA1 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
