PBSS5230T,215 Overview

In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 350mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 200MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 2A volts can be achieved.

PBSS5230T,215 Features

the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

PBSS5230T,215 Applications

There are a lot of Nexperia USA Inc. PBSS5230T,215 applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface