2SC4097T106R Overview

In this device, the DC current gain is 180 @ 10mA 3V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 250MHz.There is a breakdown input voltage of 32V volts that it can take.A maximum collector current of 500mA volts can be achieved.

2SC4097T106R Features

the DC current gain for this device is 180 @ 10mA 3V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 250MHz

2SC4097T106R Applications

There are a lot of ROHM Semiconductor 2SC4097T106R applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface