ZXT13P40DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXT13P40DE6TA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Number of Pins
6
Weight
14.996898mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
1.1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-3A
Frequency
115MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXT13P40D
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.7W
Power - Max
1.1W
Transistor Application
SWITCHING
Gain Bandwidth Product
115MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
240mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
115MHz
Collector Emitter Saturation Voltage
-175mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
7.5V
Continuous Collector Current
-3A
Height
1.3mm
Length
3.1mm
Width
1.8mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.72000
$0.72
500
$0.7128
$356.4
1000
$0.7056
$705.6
1500
$0.6984
$1047.6
2000
$0.6912
$1382.4
2500
$0.684
$1710
ZXT13P40DE6TA Product Details
ZXT13P40DE6TA Overview
In this device, the DC current gain is 300 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -175mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at -3A.The emitter base voltage can be kept at 7.5V for high efficiency.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 115MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
ZXT13P40DE6TA Features
the DC current gain for this device is 300 @ 1A 2V a collector emitter saturation voltage of -175mV the vce saturation(Max) is 240mV @ 300mA, 3A the emitter base voltage is kept at 7.5V the current rating of this device is -3A a transition frequency of 115MHz
ZXT13P40DE6TA Applications
There are a lot of Diodes Incorporated ZXT13P40DE6TA applications of single BJT transistors.