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ZXT13P40DE6TA

ZXT13P40DE6TA

ZXT13P40DE6TA

Diodes Incorporated

ZXT13P40DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXT13P40DE6TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3A
Frequency 115MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXT13P40D
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.7W
Power - Max 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 115MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 240mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 115MHz
Collector Emitter Saturation Voltage -175mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -3A
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.72000 $0.72
500 $0.7128 $356.4
1000 $0.7056 $705.6
1500 $0.6984 $1047.6
2000 $0.6912 $1382.4
2500 $0.684 $1710
ZXT13P40DE6TA Product Details

ZXT13P40DE6TA Overview


In this device, the DC current gain is 300 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -175mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at -3A.The emitter base voltage can be kept at 7.5V for high efficiency.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 115MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

ZXT13P40DE6TA Features


the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of -175mV
the vce saturation(Max) is 240mV @ 300mA, 3A
the emitter base voltage is kept at 7.5V
the current rating of this device is -3A
a transition frequency of 115MHz

ZXT13P40DE6TA Applications


There are a lot of Diodes Incorporated ZXT13P40DE6TA applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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