BCV47TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BCV47TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
330mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BCV47
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
170MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
60V
Frequency - Transition
170MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
10V
Continuous Collector Current
500mA
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.06668
$0.20004
6,000
$0.05865
$0.3519
15,000
$0.05062
$0.7593
30,000
$0.04794
$1.4382
75,000
$0.04526
$3.3945
150,000
$0.04080
$6.12
BCV47TA Product Details
BCV47TA Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages of 500mA should be maintained to achieve high efficiency.An emitter's base voltage can be kept at 10V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 170MHz in the part.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BCV47TA Features
the DC current gain for this device is 10000 @ 100mA 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 100μA, 100mA the emitter base voltage is kept at 10V the current rating of this device is 500mA a transition frequency of 170MHz
BCV47TA Applications
There are a lot of Diodes Incorporated BCV47TA applications of single BJT transistors.