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PN4250A PBFREE

  • PN4250A PBFREE
  • PN4250A PBFREE

PN4250A PBFREE

PN4250A PBFREE

Central Semiconductor Corp

PN4250A PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

PN4250A PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature -65°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 625mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100μA 5V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 500mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.399000 $0.399
10 $0.376415 $3.76415
100 $0.355109 $35.5109
500 $0.335008 $167.504
1000 $0.316045 $316.045
PN4250A PBFREE Product Details

PN4250A PBFREE Overview


In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 500μA, 10mA.The device has a 60V maximal voltage - Collector Emitter Breakdown.

PN4250A PBFREE Features


the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 250mV @ 500μA, 10mA

PN4250A PBFREE Applications


There are a lot of Central Semiconductor Corp PN4250A PBFREE applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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