FZT796ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT796ATA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2000
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-200V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT796
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 20mA, 200mA
Collector Emitter Breakdown Voltage
200V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-300mV
Max Breakdown Voltage
200V
Collector Base Voltage (VCBO)
200V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-500mA
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.532680
$0.53268
10
$0.502528
$5.02528
100
$0.474083
$47.4083
500
$0.447248
$223.624
1000
$0.421932
$421.932
FZT796ATA Product Details
FZT796ATA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 10mA 10V.A collector emitter saturation voltage of -300mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 20mA, 200mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -500mA.The emitter base voltage can be kept at -5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 100MHz.Single BJT transistor can take a breakdown input voltage of 200V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
FZT796ATA Features
the DC current gain for this device is 300 @ 10mA 10V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 300mV @ 20mA, 200mA the emitter base voltage is kept at -5V the current rating of this device is -500mA a transition frequency of 100MHz
FZT796ATA Applications
There are a lot of Diodes Incorporated FZT796ATA applications of single BJT transistors.