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FZT953TA

FZT953TA

FZT953TA

Diodes Incorporated

FZT953TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT953TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -5A
Frequency 125MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT953
JESD-30 Code R-PDSO-G4
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 125MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 460mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage -420mV
Max Breakdown Voltage 100V
Frequency - Transition 120MHz
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.05000 $1.05
500 $1.0395 $519.75
1000 $1.029 $1029
1500 $1.0185 $1527.75
2000 $1.008 $2016
2500 $0.9975 $2493.75
FZT953TA Product Details

FZT953TA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -420mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -5A current rating.Parts of this part have transition frequencies of 125MHz.An input voltage of 100V volts is the breakdown voltage.The maximum collector current is 5A volts.

FZT953TA Features


the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 460mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 125MHz

FZT953TA Applications


There are a lot of Diodes Incorporated FZT953TA applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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