FZT953TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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FZT953TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-5A
Frequency
125MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT953
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
125MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
460mV @ 500mA, 5A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
-420mV
Max Breakdown Voltage
100V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.05000
$1.05
500
$1.0395
$519.75
1000
$1.029
$1029
1500
$1.0185
$1527.75
2000
$1.008
$2016
2500
$0.9975
$2493.75
FZT953TA Product Details
FZT953TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -420mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -5A current rating.Parts of this part have transition frequencies of 125MHz.An input voltage of 100V volts is the breakdown voltage.The maximum collector current is 5A volts.
FZT953TA Features
the DC current gain for this device is 100 @ 2A 1V a collector emitter saturation voltage of -420mV the vce saturation(Max) is 460mV @ 500mA, 5A the emitter base voltage is kept at 6V the current rating of this device is -5A a transition frequency of 125MHz
FZT953TA Applications
There are a lot of Diodes Incorporated FZT953TA applications of single BJT transistors.