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FZT956TA

FZT956TA

FZT956TA

Diodes Incorporated

FZT956TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

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FZT956TA Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -200V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -2A
Frequency 110MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT956
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 370mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 200V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage -275mV
Max Breakdown Voltage 200V
Collector Base Voltage (VCBO) 220V
Emitter Base Voltage (VEBO) -7V
Continuous Collector Current -2A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.158034 $0.158034
10 $0.149088 $1.49088
100 $0.140650 $14.065
500 $0.132688 $66.344
1000 $0.125177 $125.177
FZT956TA Product Details

FZT956TA Overview


This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -275mV.A VCE saturation (Max) of 370mV @ 300mA, 3A means Ic has reached its maximum value(saturated).For high efficiency, the continuous collector voltage must be kept at -2A.Emitter base voltages of -7V can achieve high levels of efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 110MHz in the part.A breakdown input voltage of 200V volts can be used.Collector current can be as low as 2A volts at its maximum.

FZT956TA Features


the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -275mV
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -2A
a transition frequency of 110MHz

FZT956TA Applications


There are a lot of Diodes Incorporated FZT956TA applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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