FZT956TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT956TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-200V
Max Power Dissipation
3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-2A
Frequency
110MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT956
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
110MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
370mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
200V
Transition Frequency
110MHz
Collector Emitter Saturation Voltage
-275mV
Max Breakdown Voltage
200V
Collector Base Voltage (VCBO)
220V
Emitter Base Voltage (VEBO)
-7V
Continuous Collector Current
-2A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.158034
$0.158034
10
$0.149088
$1.49088
100
$0.140650
$14.065
500
$0.132688
$66.344
1000
$0.125177
$125.177
FZT956TA Product Details
FZT956TA Overview
This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -275mV.A VCE saturation (Max) of 370mV @ 300mA, 3A means Ic has reached its maximum value(saturated).For high efficiency, the continuous collector voltage must be kept at -2A.Emitter base voltages of -7V can achieve high levels of efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 110MHz in the part.A breakdown input voltage of 200V volts can be used.Collector current can be as low as 2A volts at its maximum.
FZT956TA Features
the DC current gain for this device is 100 @ 1A 5V a collector emitter saturation voltage of -275mV the vce saturation(Max) is 370mV @ 300mA, 3A the emitter base voltage is kept at -7V the current rating of this device is -2A a transition frequency of 110MHz
FZT956TA Applications
There are a lot of Diodes Incorporated FZT956TA applications of single BJT transistors.