BC817-16LT1

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Manufacturer part number:BC817-16LT1

Manufacturer:Rochester Electronics, LLC

Description:BC817-16LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

Case Package:SOT-23

Datasheet:BC817-16LT1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Pin Count	3
Power - Max	300mW
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA 1V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	500mA
Frequency - Transition	100MHz
RoHS Status	Non-RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.02000	$0.02
500	$0.0198	$9.9
1000	$0.0196	$19.6
1500	$0.0194	$29.1
2000	$0.0192	$38.4
2500	$0.019	$47.5

BC817-16LT1 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.The device exhibits a collector-emitter breakdown at 45V.