FZTA14TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZTA14TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
30V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZTA14
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 1mA, 1A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
170MHz
Collector Emitter Saturation Voltage
1.6V
Max Breakdown Voltage
30V
Frequency - Transition
170MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
hFE Min
5000
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
1A
Height
1.8mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.060240
$0.06024
500
$0.044294
$22.147
1000
$0.036912
$36.912
2000
$0.033864
$67.728
5000
$0.031649
$158.245
10000
$0.029441
$294.41
15000
$0.028472
$427.08
50000
$0.027997
$1399.85
FZTA14TA Product Details
FZTA14TA Overview
DC current gain in this device equals 20000 @ 100mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 1mA, 1A.A constant collector voltage of 1A is necessary for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).The part has a transition frequency of 170MHz.A breakdown input voltage of 30V volts can be used.When collector current reaches its maximum, it can reach 1A volts.
FZTA14TA Features
the DC current gain for this device is 20000 @ 100mA 5V a collector emitter saturation voltage of 1.6V the vce saturation(Max) is 1.6V @ 1mA, 1A the emitter base voltage is kept at 10V the current rating of this device is 1A a transition frequency of 170MHz
FZTA14TA Applications
There are a lot of Diodes Incorporated FZTA14TA applications of single BJT transistors.