MJD31CQ-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MJD31CQ-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
15W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Reference Standard
AEC-Q101
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
15W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1.2V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
3MHz
Max Breakdown Voltage
100V
Frequency - Transition
3MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.27904
$0.55808
5,000
$0.26204
$1.3102
12,500
$0.25920
$3.1104
MJD31CQ-13 Product Details
MJD31CQ-13 Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The part has a transition frequency of 3MHz.There is a breakdown input voltage of 100V volts that it can take.During maximum operation, collector current can be as low as 3A volts.
MJD31CQ-13 Features
the DC current gain for this device is 10 @ 3A 4V the vce saturation(Max) is 1.2V @ 375mA, 3A a transition frequency of 3MHz
MJD31CQ-13 Applications
There are a lot of Diodes Incorporated MJD31CQ-13 applications of single BJT transistors.