2SA1298-Y,LF Overview

In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -400mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 20mA, 500mA.Continuous collector voltages should be kept at -800mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Single BJT transistor can be broken down at a voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.

2SA1298-Y,LF Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at -5V

2SA1298-Y,LF Applications

There are a lot of Toshiba Semiconductor and Storage 2SA1298-Y,LF applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting