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PBSS302NX,115

PBSS302NX,115

PBSS302NX,115

Nexperia USA Inc.

PBSS302NX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS302NX,115 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2.1W
Terminal Form FLAT
Frequency 140MHz
Base Part Number PBSS302N
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 140MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 5.3A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 265mA, 5.3A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 140MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 5V
Turn On Time-Max (ton) 55ns
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.138815 $6.138815
10 $5.791335 $57.91335
100 $5.463523 $546.3523
500 $5.154268 $2577.134
1000 $4.862517 $4862.517
PBSS302NX,115 Product Details

PBSS302NX,115 Overview


In this device, the DC current gain is 250 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 200mV @ 265mA, 5.3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.There is a transition frequency of 140MHz in the part.As a result, it can handle voltages as low as 20V volts.During maximum operation, collector current can be as low as 5.3A volts.

PBSS302NX,115 Features


the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 200mV @ 265mA, 5.3A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz

PBSS302NX,115 Applications


There are a lot of Nexperia USA Inc. PBSS302NX,115 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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