PBSS302NX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS302NX,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.1W
Terminal Form
FLAT
Frequency
140MHz
Base Part Number
PBSS302N
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
140MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
5.3A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 265mA, 5.3A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
140MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
Turn On Time-Max (ton)
55ns
Height
6.35mm
Length
12.7mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.138815
$6.138815
10
$5.791335
$57.91335
100
$5.463523
$546.3523
500
$5.154268
$2577.134
1000
$4.862517
$4862.517
PBSS302NX,115 Product Details
PBSS302NX,115 Overview
In this device, the DC current gain is 250 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 200mV @ 265mA, 5.3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.There is a transition frequency of 140MHz in the part.As a result, it can handle voltages as low as 20V volts.During maximum operation, collector current can be as low as 5.3A volts.
PBSS302NX,115 Features
the DC current gain for this device is 250 @ 2A 2V the vce saturation(Max) is 200mV @ 265mA, 5.3A the emitter base voltage is kept at 5V a transition frequency of 140MHz
PBSS302NX,115 Applications
There are a lot of Nexperia USA Inc. PBSS302NX,115 applications of single BJT transistors.