PBSS5630PA,115 Overview

In this device, the DC current gain is 190 @ 2A 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 300mA, 6A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.In the part, the transition frequency is 80MHz.Single BJT transistor can be broken down at a voltage of 30V volts.In extreme cases, the collector current can be as low as 6A volts.

PBSS5630PA,115 Features

the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 350mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 80MHz

PBSS5630PA,115 Applications

There are a lot of Nexperia USA Inc. PBSS5630PA,115 applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter