PHPT61002NYCX Overview

This device has a DC current gain of 100 @ 500mA 1.5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 75mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 75mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Breakdown input voltage is 100V volts.Collector current can be as low as 2A volts at its maximum.

PHPT61002NYCX Features

the DC current gain for this device is 100 @ 500mA 1.5V
a collector emitter saturation voltage of 75mV
the vce saturation(Max) is 75mV @ 50mA, 500mA
the emitter base voltage is kept at 7V

PHPT61002NYCX Applications

There are a lot of Nexperia USA Inc. PHPT61002NYCX applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver