PMBT2907,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMBT2907,215 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
200MHz
Base Part Number
PMBT2907
Pin Count
3
Number of Elements
1
Polarity
NPN, PNP
Element Configuration
Single
Power Dissipation
250mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
200MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Turn On Time-Max (ton)
40ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.094151
$0.094151
500
$0.069228
$34.614
1000
$0.057690
$57.69
2000
$0.052927
$105.854
5000
$0.049464
$247.32
10000
$0.046013
$460.13
15000
$0.044501
$667.515
50000
$0.043757
$2187.85
PMBT2907,215 Product Details
PMBT2907,215 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A transition frequency of 200MHz is present in the part.An input voltage of 40V volts is the breakdown voltage.A maximum collector current of 600mA volts can be achieved.
PMBT2907,215 Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1.6V @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 200MHz
PMBT2907,215 Applications
There are a lot of Nexperia USA Inc. PMBT2907,215 applications of single BJT transistors.