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MMBT2222AT-7

MMBT2222AT-7

MMBT2222AT-7

Diodes Incorporated

MMBT2222AT-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBT2222AT-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Weight 2.012816mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2004
Series Automotive, AEC-Q101
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 600mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number MMBT2222A
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 75
Continuous Collector Current 600mA
Turn Off Time-Max (toff) 285ns
Height 750μm
Length 1.6mm
Width 800μm
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.064640 $0.06464
500 $0.047529 $23.7645
1000 $0.039608 $39.608
2000 $0.036337 $72.674
5000 $0.033960 $169.8
10000 $0.031591 $315.91
15000 $0.030552 $458.28
50000 $0.030041 $1502.05
MMBT2222AT-7 Product Details

MMBT2222AT-7 Overview


DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.Continuous collector voltage should be kept at 600mA for high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.

MMBT2222AT-7 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz

MMBT2222AT-7 Applications


There are a lot of Diodes Incorporated MMBT2222AT-7 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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