MMBT2222AT-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBT2222AT-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-523
Number of Pins
3
Weight
2.012816mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2004
Series
Automotive, AEC-Q101
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
not_compliant
Current Rating
600mA
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
MMBT2222A
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
hFE Min
75
Continuous Collector Current
600mA
Turn Off Time-Max (toff)
285ns
Height
750μm
Length
1.6mm
Width
800μm
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.064640
$0.06464
500
$0.047529
$23.7645
1000
$0.039608
$39.608
2000
$0.036337
$72.674
5000
$0.033960
$169.8
10000
$0.031591
$315.91
15000
$0.030552
$458.28
50000
$0.030041
$1502.05
MMBT2222AT-7 Product Details
MMBT2222AT-7 Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.Continuous collector voltage should be kept at 600mA for high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.
MMBT2222AT-7 Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA the emitter base voltage is kept at 6V the current rating of this device is 600mA a transition frequency of 300MHz
MMBT2222AT-7 Applications
There are a lot of Diodes Incorporated MMBT2222AT-7 applications of single BJT transistors.