MMBT3906LP-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.Continuous collector voltages should be kept at -200mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.300MHz is present in the transition frequency.A breakdown input voltage of 40V volts can be used.Collector current can be as low as 200mA volts at its maximum.
MMBT3906LP-7 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906LP-7 Applications
There are a lot of Diodes Incorporated MMBT3906LP-7 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
