PMBT4401,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMBT4401,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
TO-236AB
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
PMBT4401
Polarity
NPN
Power - Max
250mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
600mA
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.028200
$0.0282
500
$0.020735
$10.3675
1000
$0.017279
$17.279
2000
$0.015853
$31.706
5000
$0.014816
$74.08
10000
$0.013782
$137.82
15000
$0.013329
$199.935
50000
$0.013106
$655.3
PMBT4401,215 Product Details
PMBT4401,215 Overview
DC current gain in this device equals 100 @ 150mA 1V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.Product comes in the supplier's device package TO-236AB.This device displays a 40V maximum voltage - Collector Emitter Breakdown.
PMBT4401,215 Features
the DC current gain for this device is 100 @ 150mA 1V the vce saturation(Max) is 750mV @ 50mA, 500mA the supplier device package of TO-236AB
PMBT4401,215 Applications
There are a lot of Nexperia USA Inc. PMBT4401,215 applications of single BJT transistors.