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PMBT4401,215

PMBT4401,215

PMBT4401,215

Nexperia USA Inc.

PMBT4401,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBT4401,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package TO-236AB
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number PMBT4401
Polarity NPN
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.028200 $0.0282
500 $0.020735 $10.3675
1000 $0.017279 $17.279
2000 $0.015853 $31.706
5000 $0.014816 $74.08
10000 $0.013782 $137.82
15000 $0.013329 $199.935
50000 $0.013106 $655.3
PMBT4401,215 Product Details

PMBT4401,215 Overview


DC current gain in this device equals 100 @ 150mA 1V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.Product comes in the supplier's device package TO-236AB.This device displays a 40V maximum voltage - Collector Emitter Breakdown.

PMBT4401,215 Features


the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the supplier device package of TO-236AB

PMBT4401,215 Applications


There are a lot of Nexperia USA Inc. PMBT4401,215 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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