KSC2310YBU Overview
DC current gain in this device equals 120 @ 10mA 5V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Product comes in TO-92-3 supplier package.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
KSC2310YBU Features
the DC current gain for this device is 120 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
the supplier device package of TO-92-3
KSC2310YBU Applications
There are a lot of ON Semiconductor KSC2310YBU applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
