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BC556BZL1G

BC556BZL1G

BC556BZL1G

ON Semiconductor

BC556BZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC556BZL1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureEUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC -65V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating-100mA
Frequency 280MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC556
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product280MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage65V
Transition Frequency 280MHz
Collector Emitter Saturation Voltage-300mV
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) 5V
hFE Min 180
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:82145 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.09000$0.09
500$0.0891$44.55
1000$0.0882$88.2
1500$0.0873$130.95
2000$0.0864$172.8
2500$0.0855$213.75

BC556BZL1G Product Details

BC556BZL1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 2mA 5V DC current gain.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.As you can see, the part has a transition frequency of 280MHz.A maximum collector current of 100mA volts is possible.

BC556BZL1G Features


the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 280MHz

BC556BZL1G Applications


There are a lot of ON Semiconductor BC556BZL1G applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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