MMBTA05-7-F Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.Continuous collector voltage should be kept at 500mA for high efficiency.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.As a result, it can handle voltages as low as 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

MMBTA05-7-F Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
a transition frequency of 100MHz

MMBTA05-7-F Applications

There are a lot of Diodes Incorporated MMBTA05-7-F applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface