SBC807-16LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.A collector emitter saturation voltage of -700mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.Parts of this part have transition frequencies of 100MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
SBC807-16LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC807-16LT1G Applications
There are a lot of ON Semiconductor SBC807-16LT1G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
