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PBSS4230QAZ

PBSS4230QAZ

PBSS4230QAZ

Nexperia USA Inc.

PBSS4230QAZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS4230QAZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Power - Max 325mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 190mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 190MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.104448 $0.104448
10 $0.098536 $0.98536
100 $0.092958 $9.2958
500 $0.087696 $43.848
1000 $0.082732 $82.732
PBSS4230QAZ Product Details

PBSS4230QAZ Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 190mV @ 50mA, 1A.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

PBSS4230QAZ Features


the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 190mV @ 50mA, 1A

PBSS4230QAZ Applications


There are a lot of Nexperia USA Inc. PBSS4230QAZ applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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