PBSS4230QAZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4230QAZ Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Power - Max
325mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
190mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
190MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.104448
$0.104448
10
$0.098536
$0.98536
100
$0.092958
$9.2958
500
$0.087696
$43.848
1000
$0.082732
$82.732
PBSS4230QAZ Product Details
PBSS4230QAZ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 190mV @ 50mA, 1A.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
PBSS4230QAZ Features
the DC current gain for this device is 100 @ 2A 2V the vce saturation(Max) is 190mV @ 50mA, 1A
PBSS4230QAZ Applications
There are a lot of Nexperia USA Inc. PBSS4230QAZ applications of single BJT transistors.