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MMBTA64-7-F

MMBTA64-7-F

MMBTA64-7-F

Diodes Incorporated

MMBTA64-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMBTA64-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBTA64
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power - Max 300mW
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 30V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
hFE Min 10000
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.056411 $0.056411
500 $0.041478 $20.739
1000 $0.034565 $34.565
2000 $0.031712 $63.424
5000 $0.029637 $148.185
10000 $0.027569 $275.69
15000 $0.026663 $399.945
50000 $0.026217 $1310.85
MMBTA64-7-F Product Details

MMBTA64-7-F Overview


In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.The base voltage of the emitter can be kept at 10V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.As a result, it can handle voltages as low as 30V volts.A maximum collector current of 500mA volts can be achieved.

MMBTA64-7-F Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz

MMBTA64-7-F Applications


There are a lot of Diodes Incorporated MMBTA64-7-F applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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