MMST4124-7-F Overview
In this device, the DC current gain is 120 @ 2mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.A 200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 300MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.Collector current can be as low as 200mA volts at its maximum.
MMST4124-7-F Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 300MHz
MMST4124-7-F Applications
There are a lot of Diodes Incorporated MMST4124-7-F applications of single BJT transistors.
- Interface
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- Inverter
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- Muting
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- Driver
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