MMST5401-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMST5401-7-F Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-150V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-200mA
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MMST5401
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-150V
Max Collector Current
-200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
-150V
Current - Collector (Ic) (Max)
200mA
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
150V
Collector Base Voltage (VCBO)
-160V
Emitter Base Voltage (VEBO)
-5V
hFE Min
60
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Length
2.2mm
Width
1.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.169440
$0.16944
10
$0.159849
$1.59849
100
$0.150801
$15.0801
500
$0.142265
$71.1325
1000
$0.134212
$134.212
MMST5401-7-F Product Details
MMST5401-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at -5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.As a result, the part has a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 150V volts.Single BJT transistor is possible for the collector current to fall as low as -200mA volts at Single BJT transistors maximum.
MMST5401-7-F Features
the DC current gain for this device is 60 @ 10mA 5V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at -5V the current rating of this device is -200mA a transition frequency of 100MHz
MMST5401-7-F Applications
There are a lot of Diodes Incorporated MMST5401-7-F applications of single BJT transistors.