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MMST5401-7-F

MMST5401-7-F

MMST5401-7-F

Diodes Incorporated

MMST5401-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMST5401-7-F Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -150V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MMST5401
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -150V
Max Collector Current -200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage -150V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) -160V
Emitter Base Voltage (VEBO) -5V
hFE Min 60
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.169440 $0.16944
10 $0.159849 $1.59849
100 $0.150801 $15.0801
500 $0.142265 $71.1325
1000 $0.134212 $134.212
MMST5401-7-F Product Details

MMST5401-7-F Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at -5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.As a result, the part has a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 150V volts.Single BJT transistor is possible for the collector current to fall as low as -200mA volts at Single BJT transistors maximum.

MMST5401-7-F Features


the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 100MHz

MMST5401-7-F Applications


There are a lot of Diodes Incorporated MMST5401-7-F applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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