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MMSTA92-7-F

MMSTA92-7-F

MMSTA92-7-F

Diodes Incorporated

MMSTA92-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

MMSTA92-7-F Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMSTA92
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA 10V
Current - Collector Cutoff (Max) 250nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.090800 $0.0908
500 $0.066765 $33.3825
1000 $0.055637 $55.637
2000 $0.051043 $102.086
5000 $0.047704 $238.52
10000 $0.044376 $443.76
15000 $0.042917 $643.755
50000 $0.042199 $2109.95
MMSTA92-7-F Product Details

MMSTA92-7-F Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 30mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

MMSTA92-7-F Features


the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 50MHz

MMSTA92-7-F Applications


There are a lot of Diodes Incorporated MMSTA92-7-F applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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