ZTX1048ASTOA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX1048ASTOA Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Weight
453.59237mg
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
17.5V
Max Power Dissipation
1W
Current Rating
4A
Base Part Number
ZTX1048A
Element Configuration
Single
Gain Bandwidth Product
150MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
245mV
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1A 2V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
245mV @ 20mA, 4A
Collector Emitter Breakdown Voltage
17.5V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
4A
Height
4.01mm
Length
4.77mm
Width
2.41mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
ZTX1048ASTOA Product Details
ZTX1048ASTOA Overview
In this device, the DC current gain is 300 @ 1A 2V, which is the ratio between the base current and the collector current.When VCE saturation is 245mV @ 20mA, 4A, transistor means Ic has reached transistors maximum value (saturated).For high efficiency, the continuous collector voltage must be kept at 4A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
ZTX1048ASTOA Features
the DC current gain for this device is 300 @ 1A 2V the vce saturation(Max) is 245mV @ 20mA, 4A the emitter base voltage is kept at 5V the current rating of this device is 4A
ZTX1048ASTOA Applications
There are a lot of Diodes Incorporated ZTX1048ASTOA applications of single BJT transistors.