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ZTX549STZ

ZTX549STZ

ZTX549STZ

Diodes Incorporated

ZTX549STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX549STZ Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Tape & Box (TB)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.75
Voltage - Rated DC -25V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating -1A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX549
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 750mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 30V
Current - Collector (Ic) (Max) 1A
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) -35V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -1A
Height 4.95mm
Length 4.95mm
Width 3.94mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.321428 $0.321428
10 $0.303233 $3.03233
100 $0.286070 $28.607
500 $0.269877 $134.9385
1000 $0.254601 $254.601
ZTX549STZ Product Details

ZTX549STZ Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 200mA, 2A.For high efficiency, the continuous collector voltage must be kept at -1A.The base voltage of the emitter can be kept at -5V to achieve high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 100MHz.Maximum collector currents can be below 1A volts.

ZTX549STZ Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz

ZTX549STZ Applications


There are a lot of Diodes Incorporated ZTX549STZ applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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