ZTX549STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX549STZ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.29.00.75
Voltage - Rated DC
-25V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX549
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
750mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
750mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
30V
Current - Collector (Ic) (Max)
1A
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-500mV
Collector Base Voltage (VCBO)
-35V
Emitter Base Voltage (VEBO)
-5V
Continuous Collector Current
-1A
Height
4.95mm
Length
4.95mm
Width
3.94mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.321428
$0.321428
10
$0.303233
$3.03233
100
$0.286070
$28.607
500
$0.269877
$134.9385
1000
$0.254601
$254.601
ZTX549STZ Product Details
ZTX549STZ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 200mA, 2A.For high efficiency, the continuous collector voltage must be kept at -1A.The base voltage of the emitter can be kept at -5V to achieve high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As you can see, the part has a transition frequency of 100MHz.Maximum collector currents can be below 1A volts.
ZTX549STZ Features
the DC current gain for this device is 100 @ 500mA 2V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 750mV @ 200mA, 2A the emitter base voltage is kept at -5V the current rating of this device is -1A a transition frequency of 100MHz
ZTX549STZ Applications
There are a lot of Diodes Incorporated ZTX549STZ applications of single BJT transistors.