ZTX749A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
ZTX749A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
JEDEC-95 Code
TO-226AE
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
35V
Current - Collector (Ic) (Max)
2A
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.14000
$0.14
500
$0.1386
$69.3
1000
$0.1372
$137.2
1500
$0.1358
$203.7
2000
$0.1344
$268.8
2500
$0.133
$332.5
ZTX749A Product Details
ZTX749A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.As a result, the part has a transition frequency of 100MHz.This device displays a 35V maximum voltage - Collector Emitter Breakdown.
ZTX749A Features
the DC current gain for this device is 100 @ 1A 2V the vce saturation(Max) is 500mV @ 200mA, 2A a transition frequency of 100MHz
ZTX749A Applications
There are a lot of Rochester Electronics, LLC ZTX749A applications of single BJT transistors.